2SK3151 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3151
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_{DS (on)} = 11.5 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
TO–3P
ADE-208-747A (Z)
2nd. Edition
February 1999
D
2
1
G
1
2
3
3
S
1. Gate
2. Drain
(Flange)
3. Source