2SK3149 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3149
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS = 45 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
TO–220AB
ADE-208-749A (Z)
2nd. Edition
February 1999
D
G
S
1
2
3
1. Gate
2. Drain(Flange)
3. Source