2SK3147 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3147(L),2SK3147(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS = 0.1 Ω typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
DPAK–2
4
4
ADE-208-731 (Z)
1st. Edition
February 1999
D
2
1
G
3
S
12 ₃
12 ₃
1. Gate
2. Drain
3. Source
4. Drain