2SK3142 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3142
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 4 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
TO–220CFM
ADE-208-681A (Z)
2nd. Edition
February 1999
D
G
123
1. Gate
2. Drain
3. Source
S