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2SK3140 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching
2SK3140
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 6 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
TO–220CFM
ADE-208-767C (Z)
4th. Edition
February 1999
D
G
S
123
1. Gate
2. Drain
3. Source