2SK3133 Datasheet, PDF (1/5 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3133(L),2SK3133(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 7 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
ADE-208-720 (Z)
Target Specification
1st. Edition
February 1999
LDPAK
D
G
S
4
4
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain