2SK3082L Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3082(L),2SK3082(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 0.055 Ω typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
LDPAK
4
4
%
1
2
3
1
2
(
3
1. Gate
2. Drain
3. Source
4. Drain
4
ADE-208-637 (Z)
2nd. Edition
May 1998