2SK3081 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3081
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 10mΩ typ.
• 4V gate drive devices.
• High speed switching
Outline
TO–220AB
D
G
S
ADE-208-636A (Z)
3rd. Edition
Jun 1998
1
2
3
1. Gate
2. Drain(Flange)
3. Source