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| 2SK3080 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching | |||
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2SK3080
Silicon N Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance
RDS(on) = 20 m⦠typ. (VGS = 10V, ID = 15 A)
⢠4V gate drive devices.
⢠High speed switching
Outline
TOâ220AB
ADE-208-635A (Z)
2nd. Edition
May 1998
D
G
S
1
2
3
1. Gate
2. Drain(Flange)
3. Source
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