2SK3076 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3076(L),2SK3076(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• High speed switching
• Low drive current.
• Built-in fast recovery diode (trr=120 ns)
Outline
LDPAK
D
G
S
ADE-208-656 (Z)
1st. Edition
Jun 1998
4
4
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain