2SK3070 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3070(L),2SK3070(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 4.5 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
ADE-208-684G (Z)
8th. Edition
February 1999
LDPAK
D
G
S
4
4
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain