2SK3069 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3069
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 6 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
TO–220AB
D
ADE-208-694I (Z)
10th. Edition
February 1999
G
S
1
2
3
1. Gate
2. Drain(Flange)
3. Source