2SK3001 Datasheet, PDF (1/14 Pages) Hitachi Semiconductor – GaAs HEMT Low Noise Amplifier

2SK3001
GaAs HEMT
Low Noise Amplifier
Features
• Excellent low noise characteristics.
Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz)
• High associated gain.
Ga = 18 dB typ. (3 V, 5 mA, 0.9 GHz)
• Small package. (CMPAK-4)
Outline
ADE-208-597(Z)
1st. Edition
December 1997
This document may, wholly or partially, be subject to change without notice.
This Device is sensitive to Electro Static Discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
CAUTION
This product use GaAs. Since dust or fume of GaAs is highly poisonous to human body, please do not
treat them mechanically in the manner which might expose to the Air. And it should never be thrown
out with general industrial or domestic wastes.