2SK3000 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET Low Frequency Power Switching

2SK3000
Silicon N Channel MOS FET
Low Frequency Power Switching
Features
• Low on-resistance
R_DS(on) = 0. 25Ω typ. (V_GS = 10 V, I_D = 450 mA)
• 4V gate drive devices.
• Small package (MPAK)
• Expansive drain to source surge power capability
Outline
ADE-208-585 (Z)
1st. Edition
December 1997
MPAK
3
D
3
2
G
1
S
1
2
1. Source
2. Gate
3. Drain