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| 2SK2980 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching | |||
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2SK2980
Silicon N Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance
RDS(on) = 0. 2⦠typ. (VGS = 4 V, ID = 500 mA)
⢠2.5V gate drive devices.
⢠Small package (MPAK)
Outline
MPAK
3
D
G
S
ADE-208-571B (Z)
3rd. Edition
Jun 1998
1
2
1. Source
2. Gate
3. Drain
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