2SK2959 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK2959
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 7mΩ typ.
• 4V gate drive devices.
• High speed switching
Outline
TO–220AB
D
G
S
ADE-208-569C (Z)
4th. Edition
Aug 1998
1
2
3
1. Gate
2. Drain(Flange
3. Source