2SK2957 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK2957(L),2SK2957(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 7mΩ typ.
• 4V gate drive devices.
• High speed switching
Outline
LDPAK
D
G
S
ADE-208-567D (Z)
5th. Edition
Jun 1998
4
4
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain