|
2SK2956 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching | |||
|
2SK2956
Silicon N Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance
RDS(on) = 7m⦠typ.
⢠4V gate drive devices.
⢠High speed switching
Outline
TOâ220CFM
ADE-208-566B (Z)
3rd. Edition
Jun 1998
D
G
123
1. Gate
2. Drain
3. Source
S
|
▷ |