2SK2955 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK2955
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS =0.010 Ω typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
TO–3P
ADE-208-564B (Z)
3rd. Edition
Jun 1998
D
G
1. Gate
1
2
3
2. Drain
(Flange)
3. Source
S