2SK2935 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK2935
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS =0.020 Ω typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
TO–220CFM
ADE-208-558B (Z)
3rd. Edition
Jun 1998
D
G
123
1. Gate
2. Drain
3. Source
S