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2SK2933 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching | |||
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2SK2933
Silicon N Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance
RDS(on) = 0.040⦠typ.
⢠4V gate drive devices.
⢠High speed switching
Outline
TOâ220CFM
ADE-208-556B (Z)
3rd. Edition
Jun 1998
D
G
123
1. Gate
2. Drain
3. Source
S
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