2SK2929 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK2929
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS =0.026 Ω typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
TO–220AB
ADE-208-552C (Z)
4th. Edition
Jun 1998
D
G
S
1
2
3
1. Gate
2. Drain(Flange
3. Source