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| 2SK2926 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching | |||
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2SK2926(L), 2SK2926(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance
RDS(on) = 0.042⦠typ.
⢠4V gate drive devices.
⢠High speed switching
Outline
DPAKâ2
D
G
S
4
4
12 3
12 3
1. Gate
2. Drain
3. Source
4. Drain
ADE-208-535
1st. Edition
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