2SK2922 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET UHF Power Amplifier

2SK2922
Silicon N Channel MOS FET
UHF Power Amplifier
Features
• High power output, High gain, High efficiency
PG = 8.0dB, Pout = 31dBm, ηD = 57 %min. (f = 836.5MHz)
• Compact package capable of surface mounting
Outline
UPAK
ADE-208-675(Z)
1st. Edition
Aug. 1998
21
3
4
1. Gate
2. Source
3. Drain
4. Source
This Device is sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.