2SK2912 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK2912(L), 2SK2912(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS = 15 mΩ typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
LDPAK
4
4
D
1
2
3
1
2
G
3
1. Gate
2. Drain
3. Source
4. Drain
S
ADE-208-495
1st. Edition