 English |
|
|
|
|
|
|
|
| 2SK2869 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching | |||
| |||
|
2SK2869
Silicon N Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance
RDS = 0.033 ⦠typ.
⢠High speed switching
⢠4V gate drive device can be driven from 5V source
Outline
DPAKâ2
4
4
D
G
S
12 3
12 3
1. Gate
2. Drain
3. Source
4. Drain
ADE-208-570
1st. Edition
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese