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2SK2802 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET Low Frequency Power Switching
2SK2802
Silicon N Channel MOS FET
Low Frequency Power Switching
Features
• Low on-resistance
RDS(on) = 0. 2Ω typ. (VGS = 4 V, ID = 100 mA)
• 2.5V gate drive devices.
• Small package (MPAK)
Outline
MPAK
3
D
G
S
ADE-208-537C (Z)
4th. Edition
Jun 1998
1
2
1. Source
2. Gate
3. Drain