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| 2SK2796 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching | |||
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2SK2796(L), 2SK2796(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance
RDS(on) = 0.12⦠typ.
⢠4V gate drive devices.
⢠High speed switching
Outline
DPAK |1
D
G
S
ADE-208-534C (Z)
4th. Edition
Jun 1998
4
4
12 3
12 3
1. Gate
2. Drain
3. Source
4. Drain
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