2SK2795 Datasheet, PDF (1/6 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET UHF Power Amplifier

2SK2795
Silicon N Channel MOS FET
UHF Power Amplifier
Features
• High power output, High gain, High effeciency
PG = 11dB, Pout = 24dBm, ηD = 40 %min. (f = 836.5MHz)
• Compact package capable of surface mounting
Outline
UPAK
ADE-208-466 A (Z)
2nd. Edition
November. 1996
21
3
4
1. Gate
2. Source
3. Drain
4. Source
This Device is sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.