2SK2788 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK2788
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 0.12Ω typ (V_GS = 10 V, I_D = 1 A)
• Low drive current
• High speed switching
• 4V gate drive devices.
Outline
UPAK
21
3
D
4
G
S
1. Gate
2. Drain
3. Source
4. Drain
ADE-208-538
1st. Edition