2SK1622L Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1622 L , 2SK1622 S
Silicon N-Channel MOS FET
Application
High speed power switching
LDPAK
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
– Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
2, 4
1
3
123
S type
12 ₃
L type
1. Gate
2. Drain
3. Source
4. Drain
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
V_DSS
60
V
———————————————————————————————————————————
Gate to source voltage
V_GSS
±20
V
———————————————————————————————————————————
Drain current
I_D
25
A
———————————————————————————————————————————
Drain peak current
I_D(pulse)*
100
A
———————————————————————————————————————————
Body to drain diode reverse drain current I_DR
25
A
———————————————————————————————————————————
Channel dissipation
Pch**
50
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
* PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at T_C = 25 °C