 English |
|
|
|
|
|
|
|
| 2SJ588 Datasheet, PDF (1/5 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Switching | |||
| |||
|
2SJ588
Silicon P Channel MOS FET
High Speed Switching
Features
⢠Low on-resistance
RDS =2.8 ⦠typ. (VGS = -10 V , ID = -50 mA)
RDS =5.7 ⦠typ. (VGS = -4 V , ID = -50 mA)
⢠4 V gate drive device.
Outline
SPAK
ADE-208-802 (Z)
1st.Edition.
June 1999
D
3
2
G
1
S
123
1. Source
2. Drain
3. Gate
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese