 English |
|
|
|
|
|
|
|
| 2SJ586 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Switching | |||
| |||
|
2SJ586
Silicon P Channel MOS FET
High Speed Switching
Features
⢠Low on-resistance
RDS = 4.1 ⦠typ. (VGS = -4 V , ID = -50 mA)
RDS = 6.0 ⦠typ. (VGS = -2.5 V , ID = -50 mA)
⢠2.5 V gate drive device.
⢠Small package (CMPAK)
Outline
ADE-208-771A (Z)
2nd.Edition.
June 1999
CMPAK
D
3
2
G
1
S
3
1
2
1. Source
2. Gate
3. Drain
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese