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2SJ554 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching | |||
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2SJ554
Silicon P Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance
RDS(on) = 0.028⦠typ.
⢠Low drive current.
⢠4V gate drive devices.
⢠High speed switching.
Outline
TOâ3P
D
G
S
ADE-208-628B (Z)
3rd. Edition
Jun 1998
1
2
3
(BUF
%SBJO
'MBOHF
4PVSDF
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