2SJ552 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching

2SJ552(L),2SJ552(S)
Silicon P Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 0.042Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
LDPAK
D
G
S
ADE-208-651B (Z)
3rd. Edition
Jun 1998
4
4
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain