2SJ539 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching

2SJ539
Silicon P Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 0.16 Ω typ.
• Low drive current
• 4 V gete drive devices
• High speed switching
Outline
TO–220AB
D
G
S
ADE-208-657A (Z)
2nd. Edition
Jun 1998
1
2
3
1. Gate
2. Drain
(Flange)
3. Source