|
2SJ533 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching | |||
|
2SJ533
Silicon P Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance
RDS(on) = 0.028⦠typ.
⢠Low drive current.
⢠4V gate drive devices.
⢠High speed switching.
Outline
TOâ220CFM
ADE-208-649B (Z)
3rd. Edition
Jun 1998
D
G
S
123
1. Gate
2. Drain
3. Source
|
▷ |