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2SJ530 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching | |||
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2SJ530(L),2SJ530(S)
Silicon P Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance
RDS(on) = 0.08⦠typ.
⢠4V gate drive devices.
⢠High speed switching.
Outline
DPAKâ2
D
G
S
ADE-208-655B (Z)
3rd. Edition
Jun 1998
4
4
12 3
12 3
1. Gate
2. Drain
3. Source
4. Drain
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