2SJ529 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching

2SJ529(L),2SJ529(S)
Silicon P Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 0.12 Ω typ.
• 4 V gete drive devices
• High speed switching
Outline
DPAK–2
D
G
S
ADE-208-654A (Z)
2nd. Edition
Jun 1998
4
4
12 ₃
12 ₃
1. Gate
2. Drain
3. Source
4. Drain