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2SJ527 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching
2SJ527(L),2SJ527(S)
Silicon P Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 0.3 Ω typ.
• Low drive current
• 4 V gete drive devices
• High speed switching
Outline
DPAK-1
D
G
S
ADE-208-640A (Z)
2nd. Edition
Jun 1998
4
4
12 3
12 3
1. Gate
2. Drain
3. Source
4. Drain