|
2SJ526 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching | |||
|
2SJ526
Silicon P Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance
RDS(on) = 0.11 ⦠typ.
⢠Low drive current
⢠4 V gete drive devices
⢠High speed switching
Outline
TOâ220FM
ADE-208-579B (Z)
4th. Edition
Jun 1998
D
G
S
123
1. Gate
2. Drain
3. Source
|
▷ |