2SJ518 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching

2SJ518
Silicon P Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 0.35 Ω typ. at (V_GS = –10V, I_D = –1A)
• Low drive current
• 4 V gete drive devices
• High speed switching
Outline
UPAK
ADE-208-580B (Z)
3rd. Edition
Jun 1998
21
3
D
4
G
S
1. Gate
2. Drain
3. Source
4. Drain