2SJ517 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching

2SJ517
Silicon P Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 0.18 Ω typ. (at V_GS =–4V, I_D =–1A)
• Low drive current
• High speed switching
• 2.5V gate drive devices.
Outline
UPAK
ADE-208-575B (Z)
3rd. Edition
Jun 1998
1
2
3
D
4
G
S
1. Gate
2. Drain
3. Source
4. Drain