2SJ505 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching

2SJ505(L), 2SJ505(S)
Silicon P Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 0.017Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
LDPAK
D
G
S
ADE-208-547
Target specification 1st. Edition
4
4
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain