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| 2SJ496 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET High Speed Power Switching | |||
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2SJ496
Silicon P-Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance
RDS(on) = 0.12⦠typ. (at VGS = â10 V, ID = â2.5 A)
⢠4V gate drive devices.
⢠Large current capacitance
ID = â5 A
Outline
TO-92 Mod
ADE-208-482
1st. Edition
D
321
1. Source
G
2. Drain
3. Gate
S
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