2SJ484 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET High Speed Power Switching

2SJ484
Silicon P-Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 0.18 Ω typ. (at V_GS = –10V, I_D = –1A)
• Low drive current
• High speed switching
• 4V gate drive devices.
Outline
UPAK
1
2
3
D
G
S
4
1. Gate
2. Drain
3. Source
4. Drain
ADE-208-501 A
2nd. Edition