 English |
|
|
|
|
|
|
|
| 2SJ483 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching | |||
| |||
|
2SJ483
Silicon P Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance
RDS(on) = 0.08⦠typ (at VGS = â10 V, ID = â2.5 A)
⢠4V gate drive devices.
⢠Large current capacitance
ID = â5 A
Outline
TO-92MOD.
ADE-208-519
1st. Edition
D
G
S
32 1
1. Source
2. Drain
3. Gate
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese