2SJ479 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon P Channel DV-L MOS FET High Speed Power Switching

2SJ479(L), 2SJ479(S)
Silicon P Channel DV–L MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 25 mΩ typ.
• 4V gate drive devices.
• High speed switching
Outline
LDPAK
4
4
D
1
2
3
G
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
S
ADE-208-541
1st. Edition