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2SJ471 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon P Channel DV-L MOS FET High Speed Power Switching
2SJ471
Silicon P Channel DV–L MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 25 mΩ typ.
• 4V gate drive devices.
• High speed switching
Outline
TO–220CFM
ADE-208-540
1st. Edition
D
G
123
S
1. Gate
2. Drain
3. Source