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2SJ471 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon P Channel DV-L MOS FET High Speed Power Switching | |||
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2SJ471
Silicon P Channel DVâL MOS FET
High Speed Power Switching
Features
⢠Low on-resistance
RDS(on) = 25 m⦠typ.
⢠4V gate drive devices.
⢠High speed switching
Outline
TOâ220CFM
ADE-208-540
1st. Edition
D
G
123
S
1. Gate
2. Drain
3. Source
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