2SJ387 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET

2SJ387(L), 2SJ387(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• Low drive current
• 2.5 V Gate drive device can be driven from 3 V Source
• Suitable for Switching regulator, DC - DC converter
Outline
DPAK-2
4
4
123
D
12 ₃
1. Gate
G
2. Drain
3. Source
4. Drain
S